| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent characteristics.SOLUTION: A semiconductor device comprises a base layer of a first conductivity type, a barrier layer of a first conductivity type which is provided on the base layer of a first conductivity type and has a higher impurity concentration than that of the base layer of a first conductivity type, a diffusion layer of a second conductivity type which is provided adjacently to the barrier layer, a base layer of a second conductivity type provided on the barrier layer, a trench which is provided in contact with the barrier layer, the diffusion layer and the base layer of a second conductivity type so as to position its bottom in the barrier layer and the diffusion layer, a first conductor layer provided within the trench via an insulating film, a first electrode electrically connected to the base layer of a first conductivity type, and a second electrode electrically connected to the base layer of a second conductivity type. |
