THIN FILM DEPOSITION APPARATUS CLEANING METHOD, THIN FILM DEPOSITION METHOD, THIN FILM DEPOSITION APPARATUS AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus cleaning method which can efficiently clean a thin film deposition apparatus.SOLUTION: A thin film deposition apparatus cleaning method comprises performing a cleaning process of supplying a cleaning gas containing a hydrogen fluoride to a reaction tube 2 to remove attached substances attached to the inside of the apparatus. In the cleaning process, a temperature in the reaction tube 2 is set at a temperature different from a temperature in the reaction tube 2 for depositing thin films on a semiconductor wafer W. The cleaning method further comprises performing an oxidation process of supplying oxygen radicals to the reaction tube 2 to oxidize a silicon fluoride attached to the inside of the apparatus; and subsequently, performing an oxide removal process of supplying a cleaning gas containing a hydrogen fluoride to the reaction tube 2 to remove the oxidized silicon fluoride. The oxidation process and the oxide removal process are repeated a plurality of times. By doing this, a thin film deposition apparatus 1 is efficiently cleaned.