发明名称 |
SURFACE-EMITTING SEMICONDUCTOR LASER, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE |
摘要 |
A surface-emitting semiconductor laser includes a substrate, a first n-type semiconductor multi-layer reflecting mirror formed on the substrate including a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, an n-type semiconductor layer formed on the first semiconductor multi-layer reflecting mirror, having an optical film thickness greater than an oscillation wavelength, and including Al and Ga, an active region formed on the semiconductor layer, and a second p-type semiconductor multi-layer reflecting mirror formed on the active region and including a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, wherein an n-type impurity dopant injected into the semiconductor layer is a group VI material or Sn.
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申请公布号 |
US2013188993(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201213552190 |
申请日期 |
2012.07.18 |
申请人 |
KONDO TAKASHI;TAKEDA KAZUTAKA;NAKAYAMA HIDEO;FUJI XEROX CO., LTD. |
发明人 |
KONDO TAKASHI;TAKEDA KAZUTAKA;NAKAYAMA HIDEO |
分类号 |
H01S5/00;G02B27/18;G03G15/04 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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