发明名称 |
STRUCTURE AND METHOD FOR TRANSISTOR WITH LINE END EXTENSION |
摘要 |
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; an isolation feature formed in the semiconductor substrate; a first active region and a second active region formed in the semiconductor substrate, wherein the first and second active regions extend in a first direction and are separated from each other by the isolation feature; and a dummy gate disposed on the isolation feature, wherein the dummy gate extends in the first direction to the first active region from one side and to the second active region from another side.
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申请公布号 |
US2013187237(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201213356235 |
申请日期 |
2012.01.23 |
申请人 |
YU SHAO-MING;CHANG CHANG-YUN;CHANG CHIH-HAO;CHEN HSIN-CHIH;CHANG KAI-TAI;SHIEH MING-FENG;LU KUEI-LIANG;LIN YI-TANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, |
发明人 |
YU SHAO-MING;CHANG CHANG-YUN;CHANG CHIH-HAO;CHEN HSIN-CHIH;CHANG KAI-TAI;SHIEH MING-FENG;LU KUEI-LIANG;LIN YI-TANG |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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