| 摘要 |
There is provided a high frequency semiconductor switch for improving insertion loss characteristics and harmonic characteristics by providing good voltage distribution in a gate wiring. The field effect transistor includes a source wiring electrically connected to a source region formed on a substrate and extending unidirectionally; a drain wiring electrically connected to a drain region formed on the substrate and extending in parallel with the source wiring; a gate having a parallel portion extending between the source wiring and the drain wiring in approximately parallel with the source wiring and the drain wiring; a gate wiring applying voltage to the gate; and a gate via electrically connecting the gate to the gate wiring, the parallel portion including two ends and formed with a path applying voltage to each of the two ends from the gate via.
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