| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a reduced area for arranging transistors, and a semiconductor device having a transistor that can perform a high-speed operation, and reduce an area for arranging transistors, improve a numerical aperture and achieve high definition in a display device using the semiconductor device.SOLUTION: A first transistor and a second transistor are laminated and formed. A gate electrode is shared. At least any one of semiconductor films used for the first and second transistors is an oxide semiconductor film. By using the oxide semiconductor film as the semiconductor film used for the transistor, a high field-effect mobility and a high-speed operation are achieved. In addition, by laminating and forming the first and second transistors and sharing the gate electrode, an area for arranging the transistors can be reduced. |
