| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon crystal material, which is produced by a CZ method and used as a raw material rod in the production of a silicon single crystal by an FZ method, and has a part to be gripped so that it is loaded in a crystal growing furnace for the FZ method without the need of mechanical processing, and to provide a method for producing the silicon crystal material.SOLUTION: The silicon crystal material, produced by a CZ method and used in the production of a silicon single crystal by an FZ method, includes: a shoulder part 5 whose diameter is progressively enlarged; a columnar straight body part 2; a tail part 6 whose diameter is progressively reduced; and a part to be gripped 9 which is connected to a narrowed down part 4 formed at an upper part of the shoulder part 5, and is gripped when a pin, formed so as to be freely taken in and out of a gripping rod of a gripping tool, is inserted into a recessed part 9a of the part to be gripped 9 to allow loading into a furnace and single crystal growth, in the production of a silicon single crystal by the FZ method. The part to be gripped 9 is a seed crystal 9 used in the silicon crystal production process by the CZ method. |
