发明名称 |
METHOD, STRUCTURE AND DESIGN STRUCTURE FOR CUSTOMIZING HISTORY EFFECTS OF SOI CIRCUITS |
摘要 |
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric. The low-leakage dielectric has a lower leakage than the high-leakage dielectric. Also provided is a structure and method of fabricating the structure.
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申请公布号 |
US2013187243(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201313793185 |
申请日期 |
2013.03.11 |
申请人 |
CORPORATION INTERNATIONAL BUSINESS MACHINES;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;BRYANT ANDRES;NOWAK EDWARD J. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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