发明名称 METHOD, STRUCTURE AND DESIGN STRUCTURE FOR CUSTOMIZING HISTORY EFFECTS OF SOI CIRCUITS
摘要 A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric. The low-leakage dielectric has a lower leakage than the high-leakage dielectric. Also provided is a structure and method of fabricating the structure.
申请公布号 US2013187243(A1) 申请公布日期 2013.07.25
申请号 US201313793185 申请日期 2013.03.11
申请人 CORPORATION INTERNATIONAL BUSINESS MACHINES;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ANDERSON BRENT A.;BRYANT ANDRES;NOWAK EDWARD J.
分类号 H01L29/78 主分类号 H01L29/78
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