发明名称 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS
摘要 There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (AlXOY, where 0<Y/X<3/2) that absorbs light.
申请公布号 US2013187164(A1) 申请公布日期 2013.07.25
申请号 US201313738540 申请日期 2013.01.10
申请人 SONY CORPORATION;SONY CORPORATION 发明人 OSHIMA YOSHIHIRO;FUJIMORI TAKASHIGE;HIROMASU YASUNOBU;TERAI YASUHIRO
分类号 H01L29/786;H01L29/66 主分类号 H01L29/786
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