发明名称 |
THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS |
摘要 |
There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (AlXOY, where 0<Y/X<3/2) that absorbs light.
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申请公布号 |
US2013187164(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201313738540 |
申请日期 |
2013.01.10 |
申请人 |
SONY CORPORATION;SONY CORPORATION |
发明人 |
OSHIMA YOSHIHIRO;FUJIMORI TAKASHIGE;HIROMASU YASUNOBU;TERAI YASUHIRO |
分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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