发明名称 |
CROSS-POINT MEMORY UTILIZING RU/SI DIODE |
摘要 |
Memory devices utilizing memory cells including a resistive element and a diode coupled in series between two conductors. The diodes include a ruthenium material and a silicon material. The diodes further include an interface on the silicon material of ruthenium or ruthenium silicide. A ruthenium silicide interface may be a polycrystalline ruthenium silicide.
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申请公布号 |
US2013187121(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201313793150 |
申请日期 |
2013.03.11 |
申请人 |
MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. |
发明人 |
RAMASWAMY NIRMAL;PRALL KIRK D. |
分类号 |
H01L27/24 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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