IMPLANT FREE QUANTUM WELL TRANSISTOR, METHOD FOR MAKING SUCH IMPLANT FREE QUANTUM WELL TRANSISTOR, AND USE OF SUCH IMPLANT FREE QUANTUM WELL TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an implant free quantum well transistor indicating a low source/drain capacitance combined with improved short channel control, a higher body factor, and a shifted VT.SOLUTION: In an implant free quantum well transistor, a doped region 13 comprises an implant region 14 having an increased concentration of dopants with respect to the concentration of dopants of adjacent regions of the substrate 2. The implant region 14 is substantially positioned at a side of a quantum well region 3 opposing to a gate region 4.