发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving a yield while suppressing a cost of manufacture.SOLUTION: A method of manufacturing a semiconductor device includes: forming an element isolation insulating film 6 on a silicon (semiconductor) substrate 1; forming a conductive film on the element isolation insulating film 6; and patterning the conductive film by first etching and second etching to obtain a conductive pattern 13a. A condition of the second etching is that deposit 90 deposited on a lateral face 13e of the conductive pattern 13a by the second etching is more than that deposited on the lateral face 13e by the first etching.
申请公布号 JP2013145896(A) 申请公布日期 2013.07.25
申请号 JP20130034329 申请日期 2013.02.25
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 TAKAHASHI MAKOTO;KOGURE MINORU
分类号 H01L21/8247;H01L21/28;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/336;H01L21/768;H01L23/532;H01L27/10;H01L27/115;H01L29/423;H01L29/49;H01L29/788;H01L29/792 主分类号 H01L21/8247
代理机构 代理人
主权项
地址