发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving a yield while suppressing a cost of manufacture.SOLUTION: A method of manufacturing a semiconductor device includes: forming an element isolation insulating film 6 on a silicon (semiconductor) substrate 1; forming a conductive film on the element isolation insulating film 6; and patterning the conductive film by first etching and second etching to obtain a conductive pattern 13a. A condition of the second etching is that deposit 90 deposited on a lateral face 13e of the conductive pattern 13a by the second etching is more than that deposited on the lateral face 13e by the first etching. |
申请公布号 |
JP2013145896(A) |
申请公布日期 |
2013.07.25 |
申请号 |
JP20130034329 |
申请日期 |
2013.02.25 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
TAKAHASHI MAKOTO;KOGURE MINORU |
分类号 |
H01L21/8247;H01L21/28;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/336;H01L21/768;H01L23/532;H01L27/10;H01L27/115;H01L29/423;H01L29/49;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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