| 摘要 |
A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type forming a pn-junction with the first semiconductor region, and a third semiconductor region of the first conductive type disposed on the second semiconductor region. In addition, a transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region of the second conductivity type, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region, disposed under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
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