发明名称 Cu-In-Ga-Se SOLAR-CELL GLASS SUBSTRATE AND SOLAR CELL USING SAME
摘要 <p>This glass substrate for a Cu-In-Ga-Se solar cell comprises, in mass% in terms of the following oxides, 56 to 63% of SiO2, 10 to 15% of Al2O3, 0 to 1% of B2O3, 2.5 to 5% of MgO, 3 to 8% of CaO, 0 to 4% of SrO, 0 to 5% of BaO, 0.5 to 5% of ZrO2, 0 to 3% of TiO2, 0 to 5% of La2O3, 4 to 8% of Na2O, 3 to 8% of K2O, and 10 to 15% of Na2O+K2O, wherein SiO2-Al2O3 is 43% or greater but less than 50%, and K2O/Na2O is 1.3 or less. The glass substrate has a glass transition temperature of 640°C or higher, an average thermal expansion coefficient of 70×10-7 to 90×10-7/°C, and a density of 2.7 g/cm3 or less. Said glass substrate is used in the solar cell of the present invention.</p>
申请公布号 WO2013108790(A1) 申请公布日期 2013.07.25
申请号 WO2013JP50685 申请日期 2013.01.16
申请人 ASAHI GLASS COMPANY, LIMITED 发明人 NAGASHIMA TATSUO;KUROIWA YUTAKA;USUI REO;TOMIZAWA TAKESHI;OKATO TAKESHI
分类号 C03C3/087;C03C3/095;H01L31/04 主分类号 C03C3/087
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