| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser diode exhibiting superior laser characteristics by further optimizing a propagation direction of laser light.SOLUTION: A laser diode 100 includes a semiconductor base 1 that is made of a hexagonal group III nitride semiconductor and has a semi-polar plane 1a, an epitaxial layer 2, two resonator facets 102 and 103, a first electrode 4, and a second electrode 5. The epitaxial layer 2 has a light-emitting layer that forms an optical waveguide of laser light. In the epitaxial layer 2, a propagation direction of the laser light is set so as to be tilted, in an optical waveguide plane, at an angle ranging from 8 to 12 degrees or 18 to 29 degrees both inclusive with respect to a direction of projection of a c axis onto the optical waveguide plane, and the optical waveguide plane includes the propagation direction of the laser light and is parallel to the semi-polar plane 1a. |
