METHOD OF GROWING CARBON NANOTUBE LATERALLY, AND LATERAL INTERCONNECTION USING THE SAME AND FIELD EFFECT TRANSISTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of growing carbon nanotubes laterally, lateral interconnections using the same, and a field effect transistor using the same.SOLUTION: A method of growing carbon nanotubes laterally, including: a stage (1) of forming catalyst dots to grow carbon nanotubes on a substrate; a stage (2) of forming a sacrificial layer including a plurality of nanochannels including regions having the catalyst dots formed therein; and a stage (3) of growing carbon nanotubes through the nanochannels, and a field effect transistor using the method, are provided.