发明名称 SURFACE EMITTING SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMITTER, AND INFORMATION PROCESSOR
摘要 A surface emitting semiconductor laser includes a substrate; a first semiconductor distributed bragg reflector of a first conductive type; an active region; a second semiconductor distributed bragg reflector of a second conductive type; a current confinement layer that confines current in the active region; an optical confinement layer that confines light in the active region; and an optical loss unit including center and periphery portions in a predetermined direction, and gives a larger optical loss to the periphery portion than that of the center portion. Also, Do1<Do2 and Dn<Do2 are satisfied, where Do1 is a width of an optical confinement region of the optical confinement layer in the predetermined direction, Do2 is a width of a current confinement region of the current confinement layer in the predetermined direction, and Dn is a width of the center portion of the optical loss unit in the predetermined direction.
申请公布号 US2013188659(A1) 申请公布日期 2013.07.25
申请号 US201213654020 申请日期 2012.10.17
申请人 FUJI XEROX CO., LTD.;FUJI XEROX CO., LTD. 发明人 KONDO TAKASHI;TAKEDA KAZUTAKA
分类号 H01S3/10;H01L33/60;H01S5/187 主分类号 H01S3/10
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