发明名称 REFERENCE VOLTAGE GENERATING CIRCUIT
摘要 A reference voltage generating circuit with extremely low temperature dependence is provided. The reference voltage generating circuit includes a BGR circuit which generates a bandgap reference voltage; a bandgap current generating circuit which generates a bandgap current according to the bandgap reference voltage; a PTAT current generating circuit which generates a current proportional to the absolute temperature; and a linear approximate correction current generating circuit which compares the current generated by the PTAT current generating circuit and the bandgap current to generate a correction current, and the BGR circuit adds, to the bandgap reference voltage, a correction voltage generated based on the correction current.
申请公布号 US2013187628(A1) 申请公布日期 2013.07.25
申请号 US201313738546 申请日期 2013.01.10
申请人 RENESAS ELECTRONICS CORPORATION;RENESAS ELECTRONICS CORPORATION 发明人 FURUSAWA KENJI;FUKAZAWA MITSUYA
分类号 G05F3/16 主分类号 G05F3/16
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