发明名称 A SYSTEM FOR USE IN THE FORMATION OF SEMICONDUCTOR CRYSTALLINE MATERIALS
摘要 <p>A system used in the formation of a semiconductor crystalline material includes a first chamber configured to contain a liquid metal and a second chamber in fluid communication with the first chamber, the second chamber having a greater volume than a volume of the first reservoir chamber. The system further includes a vapor delivery conduit coupled to the first chamber configured to deliver a vapor phase reactant material into the first chamber to react with the liquid metal and form a metal halide vapor phase product.</p>
申请公布号 WO2013071033(A4) 申请公布日期 2013.07.25
申请号 WO2012US64340 申请日期 2012.11.09
申请人 SAINT-GOBAIN CRISTAUX ET DETECTEURS 发明人 FAURIE, JEAN-PIERRE;BEAUMONT, BERNARD
分类号 H01L21/20;H01L21/205 主分类号 H01L21/20
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