发明名称 |
SEMICONDUCTOR DEVICE WITH A LOW-K SPACER AND METHOD OF FORMING THE SAME |
摘要 |
A device includes a semiconductor substrate. A gate stack on the semiconductor substrate includes a gate dielectric layer and a gate conductor layer. Low-k spacers are adjacent to the gate dielectric layer. Raised source/drain (RSD) regions are adjacent to the low-k spacers. The low-k spacers are embedded in an ILD on the RSD regions.
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申请公布号 |
US2013187229(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201213354363 |
申请日期 |
2012.01.20 |
申请人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;LA TULIPE DOUGLAS C.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;LA TULIPE DOUGLAS C. |
分类号 |
H01L29/772;G06F9/45;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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