| 摘要 |
Provided is a P-channel non-volatile semiconductor memory device with improved write characteristics. In the P-channel non-volatile semiconductor memory device, a resistive element is formed and connected to a control gate. A delay effect of the resistive element connected to the control gate is utilized to increase a potential of the control gate so as to cancel out a decrease in floating gate potential caused by hot electrons injected by writing. This can prevent the weakening of an electric field between a pinch-off point and a drain, which leads to a decrease in amount of generated DAHEs in writing. Thus, write characteristics can be improved.
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