发明名称 MEMORY CIRCUIT AND METHOD OF WRITING DATUM TO MEMORY CIRCUIT
摘要 A circuit includes a first node, a second node, a memory cell, a first data line, a second data line, and a write driver. The memory cell is coupled to the first node and the second node and powered by a first voltage at the first node and a second voltage at the second node. The first data line and the second data line are coupled to the memory cell. The write driver has a third node carrying a third voltage less than the first voltage during a write operation. The write deriver is coupled to the first data line and the second data line and configured to, during a write operation, selectively coupling one of the first data line and the second data line to the third node and coupling the other one of the first data line and the second data line to the first node.
申请公布号 US2013188433(A1) 申请公布日期 2013.07.25
申请号 US201213354884 申请日期 2012.01.20
申请人 LIN CHIH-YU;CHAN WEI MIN;CHEN YEN-HUEI;LIAO HUNG-JEN;CHANG JONATHAN TSUNG-YUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN CHIH-YU;CHAN WEI MIN;CHEN YEN-HUEI;LIAO HUNG-JEN;CHANG JONATHAN TSUNG-YUNG
分类号 G11C7/00 主分类号 G11C7/00
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