| 摘要 |
PURPOSE: A semiconductor device is provided to improve conductivity between a pin layer and other components by connecting a transistor to a power rail through a contact layer. CONSTITUTION: A semiconductor substrate (12) has a diffusion region. A transistor (16) is formed in the diffusion region and includes a source, a drain, and a gate. A power rail (26a,26b) is arranged outside the diffusion region. A contact layer (28a,28b) is arranged above the substrate and below the power rail. A via is arranged between the contact layer and the power rail and electrically connects the contact layer and the power rail. The contact layer includes a first length part and a second length part arranged outside the diffusion region. |
