发明名称 Etching method and etching apparatus
摘要 <p>An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled includes introducing a gas into a processing chamber; setting a frequency of a high frequency power supply such that a great amount of ion energy is distributed within a range smaller than ion energy for generating an etching yield of the first polymer and equal to or larger than ion energy for generating an etching yield of the second polymer, and supplying the high frequency power into the processing chamber from the high frequency power supply; generating plasma from the gas introduced in the processing chamber by applying the high frequency power; and etching the periodic pattern on a processing target object mounted on a susceptor 16 by using the generated plasma.</p>
申请公布号 EP2618366(A2) 申请公布日期 2013.07.24
申请号 EP20130152161 申请日期 2013.01.22
申请人 TOKYO ELECTRON LIMITED 发明人 NISHIMURA, EIICHI;KOTSUGI, TADASHI;YAMASHITA, FUMIKO
分类号 H01L21/027;H01J37/32;H01L21/033;H01L21/311 主分类号 H01L21/027
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