NITRIDE BASED LIGHT EMITTING DIODE COMPRISING DISTRIBUTED BRAGG REFLECTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting diode which includes a distributed bragg reflector and manufacturing method thereof is provided to improve reflectivity by adjusting a thickness of a reflecting layer. CONSTITUTION: Multiple reflecting layers are laminated on the backside of a substrate. A Distributed Bragg Reflector is formed by laminating the reflecting layers. The Distributed Bragg Reflector comprises a first reflecting body (110) and a second reflecting body (120). The first reflecting layer (111) and the second reflecting layer (112) includes oxide material which has different refractive index with each other. A first and a second reflecting body are formed by laminating the first and the second reflecting layer.