发明名称 |
Method for depositing a chlorine-free conformal SiN film |
摘要 |
Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor. In some embodiments, the methods involve chemical vapor deposition (CVD). |
申请公布号 |
EP2618365(A2) |
申请公布日期 |
2013.07.24 |
申请号 |
EP20130152046 |
申请日期 |
2013.01.21 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
HAUSMANN, DENNIS;HENRI, JON;VAN SCHRAVENDIJK, BART;SRINIVASAN, EASWAR |
分类号 |
H01L21/02;C23C16/34;C23C16/505;H01L21/318 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|