| 摘要 |
<p>A semiconductor device comprising a circuit including a plurality of thin film transistors and at least one diode (D2a), wherein: the plurality of thin film transistors have the same conductivity type; when the conductivity type of the plurality of thin film transistors is an N type, a cathode-side electrode of the diode (D2a) is connected to a line (550) connected to a gate of a selected one of the plurality of thin film transistors; when the conductivity type of the plurality of thin film transistors, an anode-side electrode of the diode is connected to a line (550) connected to a gate of a selected one of the plurality of thin film transistors; and another diode arranged so that a current flow direction thereof is opposite to that of the diode (D2a) is not formed on the line (550). Thus, it is possible to suppress damage to a thin film transistor due to ESD while suppressing the increase in circuit scale from conventional techniques.</p> |
