发明名称 |
Semiconductor substrate for solid-state imaging sensing device as well as solid-state image sensing device and method for producing the same |
摘要 |
There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017 atoms/cm3 and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018 atoms/cm3.
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申请公布号 |
US8492193(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US201113252991 |
申请日期 |
2011.10.04 |
申请人 |
KURITA KAZUNARI;SUMCO CORPORATION |
发明人 |
KURITA KAZUNARI |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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