Atomic layer deposition encapsulation for power amplifiers in RF circuits

摘要

Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.