发明名称 |
Trenched Schottky diode and method of forming a trenched Schottky diode |
摘要 |
A Schottky diode with a small footprint and a high-current carrying ability is fabricated by forming an opening that extends into an n-type semiconductor material. The opening is then lined with a metallic material such as platinum. The metallic material is then heated to form a salicide region where the metallic material touches the n-type semiconductor material.
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申请公布号 |
US8492255(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US20110986107 |
申请日期 |
2011.01.06 |
申请人 |
HAYNIE SHELDON D.;GABRYS ANN;NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
HAYNIE SHELDON D.;GABRYS ANN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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