| 摘要 |
PURPOSE: A patterning method is provided to have a small line width roughness and excellent resolution, and to form a resist pattern with few defects after a development. CONSTITUTION: A patterning method comprises a step of spreading a resist material on a substrate; a step of exposing a resist film by high energy rays after a heat treatment; and a step of obtaining a positive pattern in which a non-exposed part is not dissolved, by dissolving an exposed part by using an alkali developer solution after a heat treatment. The resist material comprises a polymer compound which has a repeating unit in which a carboxylic group is substituted by an acid-unstable group and an acid generator; or a polymer compound which has a repeating unit generating acid by exposure and a repeating unit in which a carboxylic group is substituted by an acid-unstable group, a sulfonate of a fluoroalkyl sulfonamide, or iodine salt; and an organic solvent. |
