发明名称 |
Method and apparatus for manufacturing a SiC single crystal film |
摘要 |
A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10-3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.
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申请公布号 |
US8492774(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US201113033767 |
申请日期 |
2011.02.24 |
申请人 |
KUSUNOKI KAZUHIKO;KAMEI KAZUHITO;YASHIRO NOBUYOSHI;HATTORI RYO;NIPPON STEEL & SUMITOMO METAL CORPORATION;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
KUSUNOKI KAZUHIKO;KAMEI KAZUHITO;YASHIRO NOBUYOSHI;HATTORI RYO |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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