发明名称 |
Static random access memory (SRAM) cell and method for forming same |
摘要 |
An embodiment is a method for forming a static random access memory (SRAM) cell. The method comprises forming transistors on a semiconductor substrate and forming a first linear intra-cell connection and a second linear intra-cell connection. Longitudinal axes of the active areas of the transistors are parallel. A first pull-down transistor and a first pull-up transistor share a first common gate structure, and a second pull-down transistor and a second pull-up transistor share a second common gate structure. The first linear intra-cell connection electrically couples active areas of the first pull-down transistor and the first pull-up transistor to the second common gate structure. The second linear intra-cell connection electrically couples active areas of the second pull-down transistor and the second pull-up transistor to the first common gate structure.
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申请公布号 |
US8492215(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US201113183127 |
申请日期 |
2011.07.14 |
申请人 |
YANG LIE-YONG;CHANG FENG-MING;YANG CHANG-TA;WANG PING-WEI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YANG LIE-YONG;CHANG FENG-MING;YANG CHANG-TA;WANG PING-WEI |
分类号 |
H01L21/337 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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