发明名称 |
Vertically stacked FETs with series bipolar junction transistor |
摘要 |
Vertically stacked Field Effect Transistors (FETs) are created on a vertical structure formed on a semiconductor substrate where a first FET and a second FET are controllable independently. A bipolar junction transistor is connected between and in series with the first FET and the second FET, the bipolar junction transistor may be controllable independently of the first and second FET.
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申请公布号 |
US8492220(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US20100852811 |
申请日期 |
2010.08.09 |
申请人 |
ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS, II JOHN E.;WILLIAMS KELLY L.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS, II JOHN E.;WILLIAMS KELLY L. |
分类号 |
H01L21/8249 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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