发明名称 |
Method for forming retrograded well for MOSFET |
摘要 |
A method of forming an electrical device is provided that includes forming at least one semiconductor device on a first semiconductor layer of the SOI substrate. A handling structure is formed contacting the at least one semiconductor device and the first semiconductor layer. A second semiconductor layer and at least a portion of the dielectric layer of the SOI substrate are removed to provide a substantially exposed surface of the first semiconductor layer. A retrograded well may be formed by implanting dopant through the substantially exposed surface of the first semiconductor layer into a first thickness of the semiconductor layer that extends from the substantially exposed surface of the semiconductor layer, wherein a remaining thickness of the semiconductor layer is substantially free of the retrograded well dopant. The retrograded well may be laser annealed.
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申请公布号 |
US8492842(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US201213429948 |
申请日期 |
2012.03.26 |
申请人 |
ZHU HUILONG;LUO ZHIJIONG;LIANG QINGQING;YIN HAIZHOU;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;LUO ZHIJIONG;LIANG QINGQING;YIN HAIZHOU |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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