Damascene contacts on III-V CMOS devices

摘要

A method for manufacturing a III-V CMOS device is disclosed. The device includes a first and second main contact and a control contact. In one aspect, the method includes providing the control contact by using damascene processing. The method thus allows obtaining a control contact with a length of between about 20 nm and 5 mum and with good Schottky behavior. Using low-resistive materials such as Cu allows reducing the gate resistance thus improving the high-frequency performance of the III-V CMOS device.