发明名称 |
Gate-to-gate recessed strap and methods of manufacture of same |
摘要 |
A structure and methods of making the structure. The structure includes: first and a second semiconductor regions in a semiconductor substrate and separated by a region of trench isolation in the substrate; a first gate electrode extending over the first semiconductor region and the region of the trench isolation; a second gate electrode extending over the second silicon region and the region of the trench isolation; a trench in the trench isolation; and a strap in the trench connecting the first and second gate electrodes.
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申请公布号 |
US8492845(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US20100940210 |
申请日期 |
2010.11.05 |
申请人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H. |
分类号 |
H01L0027/000088 |
主分类号 |
H01L0027/000088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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