发明名称 Transistor including multi-layer reentrant profile
摘要 A transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. A third electrically conductive material layer is in contact with and positioned on the second electrically conductive material layer. The third electrically conductive material layer overhangs the second electrically conductive material layer.
申请公布号 US8492769(B2) 申请公布日期 2013.07.23
申请号 US20110986241 申请日期 2011.01.07
申请人 TUTT LEE W.;NELSON SHELBY F.;EASTMAN KODAK COMPANY 发明人 TUTT LEE W.;NELSON SHELBY F.
分类号 H01L29/04 主分类号 H01L29/04
代理机构 代理人
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