| 摘要 |
It is desired to achieve a high ESD protection performance by a small area circuit. An electrostatic discharge protection circuit includes: protection circuits, wherein each protection circuit includes a MOS transistor; and a trigger circuit configured to supply a trigger signal to a gate electrode of the MOS transistor of each protection circuit in response to a surge voltage between a low potential node and a high potential node. Each protection circuit is configured to electrically connect the low potential node and the high potential node to one another when the trigger signal is supplied to the gate electrode. The gate electrode of each protection circuit is connected to a resistive element having larger resistance value than Rmax, supposing that Rmax is a largest parasitic resistance between each of the plurality of protection circuit and an output of the trigger circuit.
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