发明名称 |
Removal of an overlap of dual stress liners |
摘要 |
A first liner and a second liner are formed such that a peripheral portion of the second liner overlies a peripheral portion of the first liner. A photoresist layer is applied and patterned such that a sidewall of a patterned photoresist layer overlies an overlapping peripheral portion of the second liner An isotropic dry etch is performed to laterally etch the overlapping peripheral portion of the second liner from below the patterned photoresist layer. The patterned photoresist is subsequently removed, and a structure without an overlap of the first and second liners is provided.
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申请公布号 |
US8492218(B1) |
申请公布日期 |
2013.07.23 |
申请号 |
US201213438422 |
申请日期 |
2012.04.03 |
申请人 |
CAI MING;XING AIMIN;REDDY CHANDRA;INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBAL FOUNDRIES, INC. |
发明人 |
CAI MING;XING AIMIN;REDDY CHANDRA |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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