发明名称 Plasma processing apparatus
摘要 A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
申请公布号 US8491751(B2) 申请公布日期 2013.07.23
申请号 US201213457082 申请日期 2012.04.26
申请人 KOBAYASHI HIROYUKI;IZAWA MASARU;HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 KOBAYASHI HIROYUKI;IZAWA MASARU
分类号 C23F1/00;B05C13/00;C23C16/00;H01L21/306 主分类号 C23F1/00
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