发明名称 Programming method of non-volatile memory device
摘要 A programming method includes setting the voltages of bit lines, performing a program operation, performing a program verify operation by supplying a program verify voltage and determining whether all of the memory cells of the selected page have been programmed with a target threshold voltage or higher, counting the number of passed memory cells corresponding to a number of pass bits, if, a result of the program verify operation, the program operation failed to program all of the memory cells of the selected page to the target threshold voltage or higher, and making a determination that determines whether the number of pass bits is greater than the first number of pass permission bits, and raising a voltage of a bit line coupled to a failed memory cell, if, as a result of the determination, the number of pass bits is greater than the first number of pass permission bits.
申请公布号 US8493792(B2) 申请公布日期 2013.07.23
申请号 US201113309760 申请日期 2011.12.02
申请人 ARITOME SEIICHI;WI SOO JIN;HYNIX SEMICONDUCTOR INC. 发明人 ARITOME SEIICHI;WI SOO JIN
分类号 G11C16/06;G11C11/56 主分类号 G11C16/06
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