发明名称 |
Non-linear element, display device including non-linear element, and electronic device including display device |
摘要 |
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function phims of a source electrode in contact with the oxide semiconductor, the work function phimd of a drain electrode in contact with the oxide semiconductor, and electron affinity chi of the oxide semiconductor satisfy phims@chi<phimd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.
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申请公布号 |
US8492806(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US20100912353 |
申请日期 |
2010.10.26 |
申请人 |
YAMAZAKI SHUNPEI;KAWAE DAISUKE;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KAWAE DAISUKE |
分类号 |
H01L31/062;H01L31/113 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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