发明名称 Non-linear element, display device including non-linear element, and electronic device including display device
摘要 A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function phims of a source electrode in contact with the oxide semiconductor, the work function phimd of a drain electrode in contact with the oxide semiconductor, and electron affinity chi of the oxide semiconductor satisfy phims@chi<phimd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.
申请公布号 US8492806(B2) 申请公布日期 2013.07.23
申请号 US20100912353 申请日期 2010.10.26
申请人 YAMAZAKI SHUNPEI;KAWAE DAISUKE;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KAWAE DAISUKE
分类号 H01L31/062;H01L31/113 主分类号 H01L31/062
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