| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the degradation of performance due to a lateral diffusion by performing a phosphorous doping process after a trench is formed. CONSTITUTION: An N-buried layer region (200) is formed on a semiconductor substrate (100). An epitaxial layer (300) is formed on the N-buried layer region. An insulation layer (400) is formed on the epitaxial layer. A trench (310) is formed on the epitaxial layer. A phosphorous doping process is performed in the trench. A field insulation film (600) is formed in the trench in which the phosphorous doping process is performed. |
