| 摘要 |
The semiconductor devices including interconnections and contact plugs and methods of forming the same are provided to improve the reliability by minimizing the leakage current due to the diffusion of the atoms. The semiconductor device comprises the interlayer insulating film(108) arranged on the substrate(100); the first interconnection and the second wiring(125a,125b) arranged side by side on the interlayer insulating film; the first contact plug(113a) having the upper side which is lower than the upper side of the interlayer insulating film. The first contact plug is arranged within the first contact hole which passes through the interlayer insulating film. The first interconnection passes the upper side of the first contact plug. |
