发明名称 |
Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
摘要 |
A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship "MA/MB=0.004 to 0.1". The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.
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申请公布号 |
US8492276(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US20090537766 |
申请日期 |
2009.08.07 |
申请人 |
ABE TAICHI;SHIDA HIROTAKA;TAKEMURA AKIHIRO;MENO MITSURU;HIRASAWA SHINICHI;IWADE KENJI;NISHIOKA TAKESHI;JSR CORPORATION;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ABE TAICHI;SHIDA HIROTAKA;TAKEMURA AKIHIRO;MENO MITSURU;HIRASAWA SHINICHI;IWADE KENJI;NISHIOKA TAKESHI |
分类号 |
B24B37/00;C09K3/14;H01L21/304 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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