| 摘要 |
<p>A method for the production of a photovoltaic device, for instance solar cell, is disclosed, comprising the steps of providing a substrate having a front main surface and a rear surface; depositing a dielectric layer on the rear surface, wherein the dielectric layer has a thickness larger than 100 nm; depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer and forming back contacts through the dielectric layer and the passivation layer. A method for the production of a photovoltaic device, for instance solar cell, is also disclosed, comprising the steps of providing a substrate having a front main surface and a rear surface; depositing a dielectric layer stack on the rear surface, wherein the dielectric layer stack comprises a sub-stack of dielectric layers, the sub-stack having a thickness larger than 100 nm, the dielectric layer stack having a thickness larger than 200 nm; and forming back contacts through the dielectric layer stack. Corresponding photovoltaic devices, for instance solar cell devices, are also disclosed.</p> |
