发明名称 Semiconductor memory apparatus
摘要 A semiconductor memory apparatus that generates a voltage by performing a pumping operation in response to an oscillator signal includes a driving voltage detecting unit configured to control the cycle of the oscillator signal in accordance with the level of a driving voltage that is used to perform the pumping operation.
申请公布号 US8493133(B2) 申请公布日期 2013.07.23
申请号 US20090495005 申请日期 2009.06.30
申请人 BYEON SANG-JIN;HYNIX SEMICONDUCTOR INC. 发明人 BYEON SANG-JIN
分类号 G05F1/10;G05F3/02 主分类号 G05F1/10
代理机构 代理人
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