发明名称 |
Substrate processing method |
摘要 |
A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.
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申请公布号 |
US8491804(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US20100721962 |
申请日期 |
2010.03.11 |
申请人 |
KUSHIBIKI MASATO;NISHIMURA EIICHI;TOKYO ELECTRON LIMITED |
发明人 |
KUSHIBIKI MASATO;NISHIMURA EIICHI |
分类号 |
B44C1/22;C03C15/00;C03C25/68;C23F1/00;H01L21/311 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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