发明名称 Substrate processing method
摘要 A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.
申请公布号 US8491804(B2) 申请公布日期 2013.07.23
申请号 US20100721962 申请日期 2010.03.11
申请人 KUSHIBIKI MASATO;NISHIMURA EIICHI;TOKYO ELECTRON LIMITED 发明人 KUSHIBIKI MASATO;NISHIMURA EIICHI
分类号 B44C1/22;C03C15/00;C03C25/68;C23F1/00;H01L21/311 主分类号 B44C1/22
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