发明名称 |
Application of cluster beam implantation for fabricating threshold voltage adjusted FETs |
摘要 |
Semiconductor structures including a high k gate dielectric material that has at least one surface threshold voltage adjusting region located within 3 nm or less from an upper surface of the high k gate dielectric are provided. The at least one surface threshold voltage adjusting region is formed by a cluster beam implant step in which at least one threshold voltage adjusting impurity is formed directly within the high k gate dielectric or driven in from an overlying threshold voltage adjusting material which is subsequently removed from the structure following the cluster beam implant step.
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申请公布号 |
US8492848(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US201213432716 |
申请日期 |
2012.03.28 |
申请人 |
GLUSCHENKOV OLEG;PARK DAE-GYU;YIN HAIZHOU;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GLUSCHENKOV OLEG;PARK DAE-GYU;YIN HAIZHOU |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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